Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE585
NTE585 especificación: Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A.
Path:OKDatasheet > Datasheet Semiconductor > NTE Electronic Datasheet > NTE585
NTE585 especificación: Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A.
Fabricante : NTE Electronic
Embalaje :
Pins : 2
Temperatura : Min -65 °C | Max 125 °C
Tamaño : 16 KB
Aplicación : Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A.