BUK555-200B especificación: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.

BUK555-200B similares

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BUK555-200B Datasheet y Espec

Fabricante : Philips

Embalaje : TO220AB

Pins : 3

Temperatura : Min 0 °C | Max 175 °C

Tamaño : 76 KB

Aplicación : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.