Path:OKDatasheet > Datasheet Semiconductor > Cree Datasheet > W4TRD0R-0D00

W4TRD0R-0D00 especificación: Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD0R-0D00 similares

  • W4TRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4TRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD0R-0D00 Datasheet y Espec

Fabricante : Cree 

Embalaje :  

Pins : 0 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 306 KB

Aplicación : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4TRD0R-0D00 PDF Download