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W6NXD3K-0000 especificación: "Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition"

W6NXD3K-0000 similares

  • W6NXD0K-0000
    • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W6NXD0KLSR-0000
    • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W6NXD3J-0000
    • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W6NXD3K-0000
    • "Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition"

W6NXD3K-0000 Datasheet y Espec

Fabricante : Cree 

Embalaje :  

Pins : 0 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 306 KB

Aplicación : "Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition" 

W6NXD3K-0000 PDF Download