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PSV IRF644NS 200HFR40PV IRF7751 IRF540N ST203S12PFJ2 SD400R24PBC CPV363MK IRFV260 IRL3103 48LF120D 300HF80P SD300R16PV IRU1208CS IRF7603 SD453R25S20MSC 130HF120PV ST330S16M1L IRFB31N20D IRGPH50FD2 309UA160P4 IRC730 SD300N32MSC SD200R20PC ST230S14P1L ST103S04PFN1 IRU1010-25CP 305U

IR Catálogo de datos-22

Parte NoFabricanteAplicación
ST333S04MFM0 IRInverter grade thyristor
200HF80PSV IRStandard recovery diode
IRF644NS IRN-channel power MOSFET, 250V, 14A
200HFR40PV IRStandard recovery diode
IRF7751 IRHEXFET power MOSFET. VDSS = -30V. RDS(on) = 35mOhm ID = -4.5A @ VGS = -10V. RDS(on) = 55mOhm, ID = -3.8A @ VGS = - 4.5V.
IRF540N IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A
ST203S12PFJ2 IRInverter grade thyristor
SD400R24PBC IRStandard recovery diode
CPV363MK IRIGBT SIP module
IRFV260 IRHEXFET transistor
IRL3103 IRPower MOSFET, 30V, 64A
48LF120D IRStandard recovery diode
300HF80P IRStandard recovery diode
SD300R16PV IRStandard recovery diode
IRU1208CS IR1A very low dropout positive adjustable regulator
IRF7603 IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.035 Ohm.
SD453R25S20MSC IRFast recovery diode
130HF120PV IRStandard recovery diode
ST330S16M1L IRPhase control thyristor
IRFB31N20D IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
IRGPH50FD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
309UA160P4 IRStandard recovery diode
IRC730 IRHEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
SD300N32MSC IRStandard recovery diode
SD200R20PC IRStandard recovery diode
ST230S14P1L IRPhase control thyristor
ST103S04PFN1 IRPhase control thyristor
IRU1010-25CP IR1A low dropout positive fixed 2.5V regulator
305U200P2 IRStandard recovery diode
ST173S10MFK0 IRInverter grade thyristor

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