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K IRHN7150 IRGPC50MD2 200HF80MV SD233R30S50PC ST180S12P1V SD400OC34R ST300C20C1L ST303C08CHK1L SD500N45MTC ST3230C14R3L SD453N25S30MTC SD103R08S10MC 305URA250 IRHM7360SE 301URA160P4 IRFS33N15D ST2600C24R0 302UF120PD ST183S04PFN0 IRF830AS 303URA160P3 305UA120P3 SD153R14S15MBV SD10

IR Catálogo de datos-58

Parte NoFabricanteAplicación
SD150N16PSV IRStandard recovery diode
IRG4PH40K IRInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
IRHN7150 IRHEXFET transistor
IRGPC50MD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
200HF80MV IRStandard recovery diode
SD233R30S50PC IRFast recovery diode
ST180S12P1V IRPhase control thyristor
SD400OC34R IRStandard recovery diode
ST300C20C1L IRPhase control thyristor
ST303C08CHK1L IRInverter grade thyristor
SD500N45MTC IRStandard recovery diode
ST3230C14R3L IRPhase control thyristor
SD453N25S30MTC IRFast recovery diode
SD103R08S10MC IRFast recovery diode
305URA250 IRStandard recovery diode
IRHM7360SE IRHEXFET transistor
301URA160P4 IRStandard recovery diode
IRFS33N15D IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
ST2600C24R0 IRPhase control thyristor
302UF120PD IRStandard recovery diode
ST183S04PFN0 IRInverter grade thyristor
IRF830AS IRHEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
303URA160P3 IRStandard recovery diode
305UA120P3 IRStandard recovery diode
SD153R14S15MBV IRFast recovery diode
SD103R25S20PC IRFast recovery diode
SD203N14S10PBC IRFast recovery diode
JANTXV2N6847 IRHEXFET power mosfet
IRG4PC40W IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A
IRF520NS IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A

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