Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PH50S
IRG4PH50S especificación: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRG4PH50S
IRG4PH50S especificación: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A
Fabricante : IR
Embalaje : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 142 KB
Aplicación : Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A