Path:OKDatasheet > Datasheet Semiconductor > Philips Datasheet > BUK555-100B
BUK555-100B especificación: PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
Path:OKDatasheet > Datasheet Semiconductor > Philips Datasheet > BUK555-100B
BUK555-100B especificación: PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
Fabricante : Philips
Embalaje :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 59 KB
Aplicación : PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm