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IRF820 especificación: N-channel enhancement mode power MOS transistor, 500V, 3.0A
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IRF820 Datasheet y Espec
Fabricante : ST Microelectronics
Embalaje : TO-220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 185 KB
Aplicación : N-channel enhancement mode power MOS transistor, 500V, 3.0A
IRF820 PDF Download