Path:okDatasheet > Datasheet Semiconductor > WingShing Datasheet > WingShing-2

Q 1N5404 MJ10001 79L05CPK 2SC4596E 2SC1875 WS82C55A-5P SR150 2SD1403 KBPC1502 P600B TIP146 WS628512LLT WS7805DP MJE13003 BU508D 9013 MJ11012 SMD0705 2SD1546 2SC3552 WS337L TIP42C TIP141 78L15CPK 1N5392 2SD880 WMBT5551LT1

WingShing Catálogo de datos-2

Parte NoFabricanteAplicación
SS16 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 60V. Max RMS bridge input voltage 42V. Max DC blocking voltage 60V.
SS18 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 80V. Max RMS bridge input voltage 56V. Max DC blocking voltage 80V.
WS82C55A-5Q WingShingCMOS programmable peripheral interface. Speed 5MHz
1N5404 WingShingSilicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 3.0A
MJ10001 WingShingNPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers.
79L05CPK WingShingNegative-voltage regulator. Output current up to 100mA
2SC4596E WingShingSilicon epitaxial plannar transistor. High frequency, NPN high power
2SC1875 WingShingNPN tripple diffused planar silicon transistor. Color TV horizontal output applications(no damper diode)
WS82C55A-5P WingShingCMOS programmable peripheral interface. Speed 5MHz
SR150 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 50V. Max RMS bridge input voltage 35V. Max DC blocking voltage 50V.
2SD1403 WingShingNPN silicin diffused power transistor. Horizontal deflection circuites of color TV
KBPC1502 WingShingSingle-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V
P600B WingShingSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS voltage 70V. Maximum DC blocking voltage 100V
TIP146 WingShingPNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
WS628512LLT WingShingVery low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70ns
WS7805DP WingShingPositive-voltage 3-terminal regulator. Output current up to 1.5A
MJE13003 WingShingNPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
BU508D WingShingSilicon diffused power transistor. Horizontal deflection circuites of color TV receivers.
9013 WingShingNPN silicon transistor. Power dissipation 0.625W (Tamb=25deg.C). Collector current 0.5A. Collector-base voltage 45V.
MJ11012 WingShingNPN silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
SMD0705 WingShingCrystal unit. Nominal frequency 10.00-27.00MHz
2SD1546 WingShingNPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode)
2SC3552 WingShingSilicon epitaxial planar transistor. NPN high frequenxcy, high power
WS337L WingShing3-terminal adjustable regulator. Output voltage 1.2V to 37V.
TIP42C WingShingPNP silicon power transistor. Medium power linear and switching applications Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
TIP141 WingShingNPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V
78L15CPK WingShingPositive-voltage regulator. Output current up to 100mA
1N5392 WingShingSilicon rectifier. Max reccurrent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V. Current 1.5A
2SD880 WingShingNPN epitaxial silicon transistor. Low frequency power amplifier.
WMBT5551LT1 WingShingNPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

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