Turbo IC Fichas de búsqueda, Últimas Turbo IC de datos


Para encontrar las Turbo IC IncFicha técnica, búsqueda okDatasheet por el número de pieza o componente descripción. Se le presentará una lista de todas las partes se pongan en venta con fichas Turbo IC. Haga clic en cualquier lista de componentes electrónicos para ver más detalles, incluido cualquier especificacionesEl Último de datos en PDF Turbo IC
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El Último de datos en PDF Turbo IC

Parte NoAplicación
28LV256JI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64SC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256APC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
TU25C256PI CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V.
TU25C128PC-2.7 CMOS SPI bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C64ATM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C256ASC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
29C010JI-3 High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
28LV64TI-3 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV64JI-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
TU24C32CP3 CMOS IIC 2-wire bus. 32K electrically erasable programmable ROM. 4K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C64API-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
28C256ATI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28C64ASM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64AJI-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28C256ATI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
28C64ASC-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64ATM-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
28LV64SI-6 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
28LV64PM-5 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
28C64AJC-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
TU24C128CS3 CMOS IIC 2-wire bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V.
28C256AJC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28LV64JC-4 Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28C64ATI-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
28LV256PM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.

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