Path:OKDatasheet > Datasheet Semiconductor > Hexawave Datasheet
Palabra clave: Datasheet Hexawave, Data sheet Hexawave, PDF Hexawave, Hexawave Inc
Path:OKDatasheet > Datasheet Semiconductor > Hexawave Datasheet
Palabra clave: Datasheet Hexawave, Data sheet Hexawave, PDF Hexawave, Hexawave Inc
Para encontrar las Hexawave IncFicha técnica, búsqueda okDatasheet por el número de pieza o componente descripción. Se le presentará una lista de todas las partes se pongan en venta con fichas Hexawave. Haga clic en cualquier lista de componentes electrónicos para ver más detalles, incluido cualquier especificacionesEl Último de datos en PDF Hexawave
Hexawave web oficial
Parte No | Aplicación |
---|---|
HWS306 | GaAs MMIC SPDT switch |
HWC34NC | 12 W C-band power FET non-via hole chip |
HWS301 | GaAs MMIC SPDT switch |
HWS303 | GaAs MMIC SPDT switch |
HWL30YRA | 6 W L-band GaAs power FET |
HWL34NC | 12 W L-band power FET non-via hole chip |
HWF1687RA | 7.5 W L-band GaAs power FET |
HWL34YRF | 12 W L-band GaAs power FET |
HWL26NPA | 2 W L-band GaAs power FET |
HWF1682RA | 20 W L-band GaAs power FET |
HWS2352 | GaAs MMIC SPDT terminated switch |
HWC27YC | 3.5 W C-band power FET via hole chip |
HWL34YRA | 12 W L-band GaAs power FET |
HWL30NPA | 2.8 W L-band GaAs power FET |
HWS305 | GaAs MMIC SPDT switch |
HWL30YRF | 6 W L-band GaAs power FET |
HWL27YRA | 3.5 W L-band GaAs power FET |
HWL27NC | 3.5 W L-band power FET via hole chip |
HWF1686NC | 3.5 W L-band power FET non-via hole chip |
HWL26YC | 1.7 W L-band power FET via hole chip |
HWL23NPB | 0.7 W L-band GaAs power FET |
HWL36YRA | 15 W L-band GaAs power FET |
HWL32NPA | 2.8 W L-band GaAs power FET |
HWS332 | GaAs MMIC SPDT terminated switch |
HWL32NPA | 2.8 W L-band GaAs power FET |
HWS332 | GaAs MMIC SPDT terminated switch |
HWL36YRF | 15 W L-band GaAs power FET |
HWC27NC | 3.5 W C-band power FET non-via hole chip |
Hexawave, Inc. was established in 1991 with the goal of serving the rapidly growing wireless communication industry. The company is dedicated to developing, manufacturing, and marketing a wide range of GaAs based RF products. Headquartered in Hsinchu Science-Based industrial Park, the high-tech center of Taiwan, Hexawave has a 35,000 square ft. facility, which includes a class 100 GaAs wafer fab line, assembly and testing facility.
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