HY57V651620BLTC-10P especificación: Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power

HY57V651620BLTC-10P similares

HY57V641620HGLT-5I
- "4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz"
HY57V658020BLTC-10P
- 4Mbit x 2 bank x 8 SDRAM, LVTTL, low power, 100MHz
HY57V658020TC-12
- 2Mbit x 4bank x 8 SDRAM, LVTTL, 120ns
HY57V161610DTC-8
- 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 125 MHz
HY57V161610DTC-7I
- 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 143 MHz
HY57V641620HGT-55
- 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 183 MHz
HY57V658010TC-10
- 4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns
HY57V641620HGT-7
- 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 143 MHz

HY57V651620BLTC-10P Datasheet y Espec

Fabricante : HYNIX

Embalaje : TSOP II

Pins : 54

Temperatura : Min 0 °C | Max 70 °C

Tamaño : 89 KB

Aplicación : Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power