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6G ZMM55-C22 KBU1001 SMAJ22CA 1N757A SMAJ60A SMAJ18A 1N4741A SMBJ5946B SMAJ15C SMAJ22A HER103G SMBJ5933D DF005S P4KE51CA 1W005G P6KE51CA P4KE120 1N4753C FR603 KBPC804G 1N992C FR104L P4KE170CA 1N5519 HA16 6A05G 1N4125
JGD Catálogo de datos-10
| Parte No | Fabricante | Aplicación |
|---|---|---|
| SMBJ20C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 22.2 V (min), 27.1 V (max). Test current 1.0 mA. Bidirectional. |
| 1N4372C | JGD | 500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
| FR206G | JGD | 2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| ZMM55-C22 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-5% tolerance. |
| KBU1001 | JGD | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
| SMAJ22CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. Bidirectional. |
| 1N757A | JGD | 500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-5% tolerance. |
| SMAJ60A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. |
| SMAJ18A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. |
| 1N4741A | JGD | 1W zener diode. Zener voltage 11V. |
| SMBJ5946B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-5% tolerance. |
| SMAJ15C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional. |
| SMAJ22A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. |
| HER103G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| SMBJ5933D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-1% tolerance. |
| DF005S | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
| P4KE51CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
| 1W005G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
| P6KE51CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
| P4KE120 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. |
| 1N4753C | JGD | 1W zener diode. Nominal zener voltage 36V. 2% tolerance. |
| FR603 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| KBPC804G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| 1N992C | JGD | 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-2% tolerance. |
| FR104L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| P4KE170CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
| 1N5519 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-20% tolerance. |
| HA16 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| 6A05G | JGD | 6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 50 V. |
| 1N4125 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 47V. |