| Parte No | Fabricante | Aplicación |
|---|
| 1N4754C | JGD | 1W zener diode. Nominal zener voltage 39V. 2% tolerance. |
| FR101G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
| SMBJ36C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 40.0 V (min), 48.9 V (max). Test current 1.0 mA. Bidirectional. |
| HER103L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| UF5404G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 3.0 A. |
| 1N988 | JGD | 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-20% tolerance. |
| 1N4626C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 5.6V. 2% tolerance. |
| 2W01 | JGD | Single phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. |
| 1N4130C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 68V. 2% tolerance. |
| 1N758 | JGD | 500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. +-10% standard tolerance. |
| S1G | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A. |
| SMAJ48CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional. |
| FS1K | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 800V. |
| 3EZ68D10 | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-10% tolerance. |
| SMAJ170A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 170 V. |
| SMBJ5935B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 27 V. Test current 13.9 mA. +-5% tolerance. |
| 1N4751C | JGD | 1W zener diode. Nominal zener voltage 30V. 2% tolerance. |
| FR155 | JGD | 1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4370D | JGD | 500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
| 1N5536A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| SMBJ5940 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 43 V. Test current 8.7 mA. +-20% tolerance. |
| 3EZ160D10 | JGD | 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-10% tolerance. |
| SS14 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current 1.0 A. |
| 1N974C | JGD | 0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-2% tolerance. |
| P4KE9.1A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. |
| 3EZ62D3 | JGD | 3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-3% tolerance. |
| 1N5544B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| SMBJ5948B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 91 V. Test current 4.1 mA. +-5% tolerance. |
| SMBJ5946A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
| P6KE47 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. |
