| Parte No | Fabricante | Aplicación |
|---|
| P6KE7.5 | MDE Semiconductor | 6.05V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE68A | MDE Semiconductor | 58.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMAJ6.0A | MDE Semiconductor | 6.00V; 10mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP60 | MDE Semiconductor | 60V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ45 | MDE Semiconductor | 45.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-32D221K | MDE Semiconductor | 220V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| MDE-25S122K | MDE Semiconductor | 1200V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| MDE-10D102K | MDE Semiconductor | 1000V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| 5KP58 | MDE Semiconductor | 58.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 20KW52A | MDE Semiconductor | 52.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ58A | MDE Semiconductor | 58.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP45 | MDE Semiconductor | 45.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P6KE300A | MDE Semiconductor | 256.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3T310A | MDE Semiconductor | 275V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| 1.5KE440 | MDE Semiconductor | 356.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX40-22.0C | MDE Semiconductor | 22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE22 | MDE Semiconductor | 17.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-25S751K | MDE Semiconductor | 750V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| 1.5KE68 | MDE Semiconductor | 55.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 30KW36 | MDE Semiconductor | 36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-18.0CA | MDE Semiconductor | 18.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE30 | MDE Semiconductor | 24.30V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SA130A | MDE Semiconductor | 130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25S821K | MDE Semiconductor | 820V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| 1.5KE110A | MDE Semiconductor | 94.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| P4KE100A | MDE Semiconductor | 85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ110 | MDE Semiconductor | 110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ70 | MDE Semiconductor | 70.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-26.0C | MDE Semiconductor | 26.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW78A | MDE Semiconductor | 78.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
