Path:okDatasheet > Datasheet Semiconductor > PanJit Datasheet > PanJit-102
6SMBJ45C SA43A 1.5SMCJ33A BZT52-C3V6S TSP275SB UF3J CP800 PG600R P6KE68C SB630CT GBL400 1SMB3EZ150 SB840 PG5399 UF3K MMBZ5255BW PS108RS SA110C 3.0SMCJ43C SA14CA P6KE7.5A P6KE12A UF208 P4KE62C 1.5SMCJ9.0C 1SMB3EZ190 3.0SMCJ220CA SA170CA
Parte No | Fabricante | Aplicación |
---|---|---|
P4SMAJ78C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 78 V. Breakdown voltage(min/max) 86.7/109.8 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 139 V. Peak pulse current 2.9 A. |
TSP075SA | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 75V. Breakover voltage 98V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
P6SMBJ45C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 45 V. Vbr(min/max) = 50.0/63.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 80.3 V. Ipp = 7.5 A. |
SA43A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 43.00V, Vbr(min/max) = 47.80/54.90V, It = 1 mA. |
1.5SMCJ33A | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 33V; Vbr(min/max) = 36.7/42.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 53.3V, @ Ipp = 28.1A |
BZT52-C3V6S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 3.6 V |
TSP275SB | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 275V. Breakover voltage 350V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
UF3J | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. |
CP800 | PanJit | Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 50V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25). |
PG600R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 50 A. Max average forward rectified current at Ta = 60degC 6.0 A. |
P6KE68C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 55.10V, Vbr(min/max) = 61.20/74.80V, It = 1 mA. |
SB630CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Ta = 75degC 6 A. |
GBL400 | PanJit | Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
1SMB3EZ150 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 150 V. Test current Izt = 5 mA |
SB840 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 100degC 8 A. |
PG5399 | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 1000 A. Max average forward rectified current 0.375inches lead length at Ta = 55degC 1.5 A.. |
UF3K | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 3.0 A. |
MMBZ5255BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 28 V @ Izt. 200 mWatts zener diode. |
PS108RS | PanJit | Fast switching plastic diode. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A. |
SA110C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 110.00V, Vbr(min/max) = 122.00/154.50V, It = 1 mA. |
3.0SMCJ43C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 43 V. Vbr(max/min) = 47.8/60.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 76.7 V @ Ipp = 39.2 A. |
SA14CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 14.00V, Vbr(min/max) = 15.60/17.90V, It = 1 mA. |
P6KE7.5A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 6.40V, Vbr(min/max) = 7.13/7.88V, It = 10 mA. |
P6KE12A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 10.20V, Vbr(min/max) = 11.40/12.60V, It = 1 mA. |
UF208 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 2.0 A. |
P4KE62C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 50.20V, Vbr(min/max) = 55.80/68.20V, It = 1 mA. |
1.5SMCJ9.0C | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 9.0V; Vbr(min/max) = 10.0/12.6V @ It = 1.0mA; Ir(@ Vrwm) = 10uA; Vc = 16.9V @ Ipp = 88.7A |
1SMB3EZ190 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 190 V. Test current Izt = 4 mA |
3.0SMCJ220CA | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 220 V. Vbr(min/max) = 242/281.6.0V @ It. Ir = 5 uA @ Vrwm. Vc = 356 V @ Ipp = 8.4 A. |
SA170CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 170.00V, Vbr(min/max) = 189.00/217.50V, It = 1 mA. |