Path:okDatasheet > Datasheet Semiconductor > PanJit Datasheet > PanJit-69
MCJ160 3.0SMCJ78CA P4SMAJ220CA P4KE150A 3KP18 PG600J 15KP51A 1N5358B BZT52-C24S P4KE47 1.5SMCJ11A P6SMBJ60A BAT54W 1.5SMCJ7.5CA SD3100S 1.5SMCJ58CA ER801F 1SMB5949 GBPC35005 3.0SMCJ9.0A ES1B PG106RS 1.5SMCJ54 1N5395 B2S 3.0SMCJ60 MMSZ5252BS 1SMC5379
Parte No | Fabricante | Aplicación |
---|---|---|
1N5352B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA |
TSP058B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 58V. Breakover voltage 77V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
3.0SMCJ160 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 160 V. Vbr(min/max) = 178/226.0.0V @ It. Ir = 5 uA @ Vrwm. Vc = 287 V @ Ipp = 10.4 A. |
3.0SMCJ78CA | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 78 V. Vbr(min/max) = 86.7/99.7 V @ It. Ir = 5 uA @ Vrwm. Vc = 126 V @ Ipp = 22.8 A. |
P4SMAJ220CA | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 220 V. Breakdown voltage(min/max) 242/281.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 356 V. Peak pulse current 1.1 A. |
P4KE150A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 128.00V, Vbr(min/max) = 143.00/158.00V, It = 1 mA. |
3KP18 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 18.00 V. Vbr = 20.00 V (min), 25.30 V (max). It = 1 mA. |
PG600J | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current at Ta = 75degC 6.0 A. |
15KP51A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 51 V. Vbr(min/max) = 56.7/65.2 V @ It = 5.0 mA. Ir = 10 uA. Vc = 82.4 V @ Ipp = 181 A. |
1N5358B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 22V, Izt = 50mA |
BZT52-C24S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 24 V |
P4KE47 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 38.10V, Vbr(min/max) = 42.30/51.70V, It = 1mA. |
1.5SMCJ11A | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 11V; Vbr(min/max) = 12.2/14.0V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 18.2V @ Ipp = 82.4A |
P6SMBJ60A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 60 V. Vbr(min/max) = 66.7/76.7 V. It = 1.0 mA. Ir = 5 uA. Vc = 96.8 V. Ipp = 6.2 A. |
BAT54W | PanJit | Surface mount schottky barrier diode. Max recurrent peak reverse voltage 30 V. Max average forward current 0.2 A. |
1.5SMCJ7.5CA | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 7.5V; Vbr(min/max) = 8.33/9.58V @ It = 1.0mA; Ir(@ Vrwm) = 200uA; Vc = 12.9V @ Ipp = 116.3A |
SD3100S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A. |
1.5SMCJ58CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 58V; Vbr(min/max) = 64.4/74.1V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 93.6V, @ Ipp = 16.0A |
ER801F | PanJit | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified current 8.0 A. |
1SMB5949 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 100 V. Test current Izt = 3.7 mA |
GBPC35005 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 35 A. |
3.0SMCJ9.0A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 9.0 V. Vbr(max/min) = 10.0/11.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 15.4 V @ Ipp = 194.8 A. |
ES1B | PanJit | Surface mount superfast rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified current 1.0 A. |
PG106RS | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current 9.5mm lead length at 55degC 1.0 A. |
1.5SMCJ54 | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 54V; Vbr(min/max) = 60.0/76.0V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 96.3V, @ Ipp = 15.6A |
1N5395 | PanJit | Plastic silicon rectifier. Max reccurent peak reverse voltage 400V. Max average forward rectified current 1.5A. |
B2S | PanJit | Mini surface mount glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 0.5 A (on glass-epoxy P.C.B.), 0.8 A (on aluminum substrate). |
3.0SMCJ60 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 60 V. Vbr(min/max) = 66.7/84.5 V @ It. Ir = 5 uA @ Vrwm. Vc = 107 V @ Ipp = 28.0 A. |
MMSZ5252BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 24 V @ Izt. 200 mWatts zener diode. |
1SMC5379 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 110 V. Test current Izt = 12 mA. |