Path:okDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > Shanghai Sunrise-27
P4KE8.2A P6KE30A KBPC2502W RC30S06 1.5KE220 P4KE350C KBPC3508 1.5KE130CA GBPC1502 S2BA 1.5KE400A 5KP18CA SF1A XR73-4.3R SF1C 1N5406G W06M P6KE43C SB320 RC30S04G P4KE56 5KP6.5A 5KP48C P4KE200CA KBP01 2CW37-8.2A P4KE150C 5KP14CA
| Parte No | Fabricante | Aplicación |
|---|---|---|
| 2CW37-13A | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 12.4-13.4 V. Zener current Iz = 5 mA. |
| XR73-2.2S | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 2.22-2.41 V. Zener current Iz = 20 mA. Power dissipation Pt = 500 mW. |
| P4KE8.2A | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 7.79 V, Vbr(max) = 8.61 V. Test current It = 10.0 mA. |
| P6KE30A | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 28.5 V, Vbr(max) = 31.5 V. Test current It = 1.0 mA. |
| KBPC2502W | Shanghai Sunrise | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 25 A. |
| RC30S06 | Shanghai Sunrise | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A. |
| 1.5KE220 | Shanghai Sunrise | Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
| P4KE350C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
| KBPC3508 | Shanghai Sunrise | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 35 A. |
| 1.5KE130CA | Shanghai Sunrise | Transient voltage suppressor. 1500 W. Breakdown voltage 124.0 V(min), 137.0 V(max). Test current 1.0 mA. |
| GBPC1502 | Shanghai Sunrise | Single phase glass passivated bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 15 A. |
| S2BA | Shanghai Sunrise | Surface mount glass passivated rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 2.0 A. |
| 1.5KE400A | Shanghai Sunrise | Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. |
| 5KP18CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 20.0 V, Vbrmax = 22.1 V. Test current It = 5.0 mA. |
| SF1A | Shanghai Sunrise | Surface mount super fast switching rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 1.0 A |
| XR73-4.3R | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 4.04-4.29 V. Zener current Iz = 20 mA. Power dissipation Pt = 500 mW. |
| SF1C | Shanghai Sunrise | Surface mount super fast switching rectifier. Max repetitive peak reverse voltage 150 V. Max average forward rectified current 1.0 A |
| 1N5406G | Shanghai Sunrise | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 3.0 A. |
| W06M | Shanghai Sunrise | Single phase silicon bridge rectifier. Current 1.5 A. Max repetitive peak reverse voltage 600 V |
| P6KE43C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 38.7 V, Vbr(max) = 47.3 V. Test current It = 1.0 mA. |
| SB320 | Shanghai Sunrise | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 A. |
| RC30S04G | Shanghai Sunrise | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A. |
| P4KE56 | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 50.4 V, Vbr(max) = 61.6 V. Test current It = 1.0 mA. |
| 5KP6.5A | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 7.22 V, Vbrmax = 7.98 V. Test current It = 50 mA. |
| 5KP48C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 53.3 V, Vbrmax = 65.2 V. Test current It = 5.0 mA. |
| P4KE200CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
| KBP01 | Shanghai Sunrise | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 2.0 A. |
| 2CW37-8.2A | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 7.70-8.30 V. Zener current Iz = 5 mA. |
| P4KE150C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
| 5KP14CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 15.6 V, Vbrmax = 17.2 V. Test current It = 5.0 mA. |