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54S416T-6 similares

  • 54S416T-5
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
  • 54S416T-6
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
  • 54S416T-7
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA

54S416T-6 Datasheet y Espec

Fabricante : Ceramate 

Embalaje : TSOP 

Pins : 54 

Temperatura : Min 0 °C | Max 70 °C

Tamaño : 1126 KB

Aplicación : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA 

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