Path:OKDatasheet > Datasheet Semiconductor > Chenyi Electronics Datasheet > DB6
DB6 especificación: Silicon bidirectional DIAC. Breakover voltage(typ) 60 V. Repetitive peak in-state current 1.6 A.
Path:OKDatasheet > Datasheet Semiconductor > Chenyi Electronics Datasheet > DB6
DB6 especificación: Silicon bidirectional DIAC. Breakover voltage(typ) 60 V. Repetitive peak in-state current 1.6 A.
Fabricante : Chenyi Electronics
Embalaje : DO-35
Pins : 2
Temperatura : Min -40 °C | Max 110 °C
Tamaño : 118 KB
Aplicación : Silicon bidirectional DIAC. Breakover voltage(typ) 60 V. Repetitive peak in-state current 1.6 A.