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W4TXE0X-0D00 especificación: Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 similares

  • W4TXE0X-0D00
    • Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 Datasheet y Espec

Fabricante : Cree 

Embalaje :  

Pins : 0 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 306 KB

Aplicación : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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