Path:OKDatasheet > Datasheet Semiconductor > Diodes Datasheet > 1N4006GL
1N4006GL especificación: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
Path:OKDatasheet > Datasheet Semiconductor > Diodes Datasheet > 1N4006GL
1N4006GL especificación: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
Fabricante : Diodes
Embalaje :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 65 KB
Aplicación : 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop