CTA2N1P-7 especificación: 60V; 150mW complex transistor array. Guard ring construction for transient protection

CTA2N1P-7 similares

CTA2N1P-7
- 60V; 150mW complex transistor array. Guard ring construction for transient protection
CTA2P1N-7
- 40V; 150mW complex transistor array

CTA2N1P-7 Datasheet y Espec

Fabricante : Diodes

Embalaje : SOT-363

Pins : 6

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 67 KB

Aplicación : 60V; 150mW complex transistor array. Guard ring construction for transient protection