Path:OKDatasheet > Datasheet Semiconductor > Diodes Datasheet > TB1100M
TB1100M especificación: 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M similares
- TB1100H
- 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100L
- 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100M
- 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M Datasheet y Espec
Fabricante : Diodes
Embalaje : SMB
Pins : 2
Temperatura : Min -40 °C | Max 150 °C
Tamaño : 205 KB
Aplicación : 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M PDF Download