UPD45128841G5-A10-9JF especificación: 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 10ns, 3.3V

UPD45128841G5-A10-9JF similares

UPD45128841G5-A80L-9JF
- 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 8ns, 3.3V, low power
UPD45128441G5-A80L-9JF
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UPD45128441G5-A75L-9JF
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V, low power
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- 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 7.5ns, 3.3V
UPD45128441G5-A75-9JF
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V
UPD45128163G5-A80-9JF
- 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3V
UPD45128841G5-A80LT-9JF
- 128M-bit (4M x 8-bit x 4-bank), synchronous DRAM LVTTL, 125 MHz
UPD45128441G5-A80-9J
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V

UPD45128841G5-A10-9JF Datasheet y Espec

Fabricante : Elpida

Embalaje : TSOP II

Pins : 54

Temperatura : Min 0 °C | Max 70 °C

Tamaño : 750 KB

Aplicación : 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 10ns, 3.3V