Path:OKDatasheet > Datasheet Semiconductor > Fairchild Datasheet > FDN357N
FDN357N especificación: N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN357N similares
- FDN302P
- P-Channel 2.5V Specified PowerTrench MOSFET
- FDN304P
- MOSFET P SOT-23
- FDN306P
- P-Channel 1.8V Specified PowerTrench MOSFET
- FDN308P
- P-Channel 2.5V Specified PowerTrench MOSFET
- FDN335N
- N-Channel 2.5V Specified PowerTrench® MOSFET
- FDN336P
- Single P-Channel Logic Level PowerTrench® MOSFET
- FDN337N
- N-Channel Logic-Level Enhancement Mode Field Effect Transistor
- FDN339AN
- N-Channel 2.5V Specified PowerTrench® MOSFET
FDN357N Datasheet y Espec
Fabricante : Fairchild
Embalaje : SOT-23
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 92 KB
Aplicación : N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN357N PDF Download