NDB603AL especificación: N-channel logic level enhancement mode field effect transistor, 30V, 25A

NDB603AL similares

NDB6020P
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NDB6030L
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V
NDB603AL
- N-channel logic level enhancement mode field effect transistor, 30V, 25A
NDB6051
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 4 V (D2-Pak) Voltage Vds max 50 V
NDB6060L
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V

NDB603AL Datasheet y Espec

Fabricante : Fairchild

Embalaje : TO-263AB

Pins : 3

Temperatura : Min -65 °C | Max 175 °C

Tamaño : 71 KB

Aplicación : N-channel logic level enhancement mode field effect transistor, 30V, 25A