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RFD4N06L especificación: Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C

RFD4N06L similares

  • RFD4N06L
    • Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C

RFD4N06L Datasheet y Espec

Fabricante : Fairchild 

Embalaje : TO-251 

Pins : 0 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 41 KB

Aplicación : Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C 

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