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1819AB12 similares

  • 1819-35
    • 35 W, 28 V, 1750-1850 MHz common base transistor
  • 1819AB12
    • 12 W, 25 V, 1808-1880 MHz common emitter transistor
  • 1819AB35
    • 35 W, 25 V, 1808-1880 MHz common emitter transistor
  • 1819AB4
    • "4 W, 25 V, 1808-1880 MHz common emitter transistor"

1819AB12 Datasheet y Espec

Fabricante : GHz Technology 

Embalaje : 55CT 

Pins : 3 

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 27 KB

Aplicación : 12 W, 25 V, 1808-1880 MHz common emitter transistor 

1819AB12 PDF Download