GS8161E18T-200I especificación: 6.5ns 200MHz 1M x 18 pipelined and flow through synchronous SRAM

GS8161E18T-200I similares

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GS816036T-225
- 6ns 225MHz 512K x 36 18Mb synchronous burst SRAM
GS818DV18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
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- 200MHz 512K x 36 synchronous SRAM
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- 6.5ns 200MHz 512K x 36 synchronous burst SRAM

GS8161E18T-200I Datasheet y Espec

Fabricante : GSI

Embalaje : TQFP

Pins : 100

Temperatura : Min -40 °C | Max 85 °C

Tamaño : 1126 KB

Aplicación : 6.5ns 200MHz 1M x 18 pipelined and flow through synchronous SRAM