GS8170LW18C-300 especificación: 300MHz 1M x 18 18MB double late write sigmaRAM SRAM

GS8170LW18C-300 similares

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GS816036T-225
- 6ns 225MHz 512K x 36 18Mb synchronous burst SRAM
GS818DV18D-333
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GS8160E36T-200
- 6.5ns 200MHz 512K x 36 synchronous burst SRAM

GS8170LW18C-300 Datasheet y Espec

Fabricante : GSI

Embalaje : BGA

Pins : 209

Temperatura : Min 0 °C | Max 70 °C

Tamaño : 964 KB

Aplicación : 300MHz 1M x 18 18MB double late write sigmaRAM SRAM