Path:OKDatasheet > Datasheet Semiconductor > HYNIX Datasheet > HY51V18163HGT-6
HY51V18163HGT-6 especificación: Dynamic RAM organized 1,048,576 words x 16bit, 60ns
HY51V18163HGT-6 similares
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- HY51V17403HGLJ-6
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- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
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- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51V18163HGT-6 Datasheet y Espec
Fabricante : HYNIX
Embalaje : TSOP II
Pins : 44
Temperatura : Min 0 °C | Max 70 °C
Tamaño : 117 KB
Aplicación : Dynamic RAM organized 1,048,576 words x 16bit, 60ns
HY51V18163HGT-6 PDF Download