Path:OKDatasheet > Datasheet Semiconductor > Hamamatsu Datasheet > P6606-320
P6606-320 especificación: Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320 similares
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- P6606-310
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
- P6606-320
- Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320 Datasheet y Espec
Fabricante : Hamamatsu
Embalaje : TO-8
Pins : 6
Temperatura : Min -40 °C | Max 60 °C
Tamaño : 170 KB
Aplicación : Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320 PDF Download