H2N5401 especificación: 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage

H2N5401 similares

H2N5087
- 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications
H2N5088
- 50mA NPN epitaxial planar transistor for low noise, high gain, general purpose amplifier applications
H2N5366
- 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages
H2N5401
- 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage
H2N5551
- 600mA NPN epitaxial planar transistor

H2N5401 Datasheet y Espec

Fabricante : Hi Sincerity

Embalaje :

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 41 KB

Aplicación : 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage