Path:OKDatasheet > Datasheet Semiconductor > Hitachi Datasheet > BB302M
BB302M especificación: Small signal high frequency amplifier field effect (FET) transistor
BB302M similares
- BB301C
- Small signal high frequency amplifier field effect (FET) transistor
- BB301M
- Small signal high frequency amplifier field effect (FET) transistor
- BB302C
- Small signal high frequency amplifier field effect (FET) transistor
- BB302M
- Small signal high frequency amplifier field effect (FET) transistor
- BB304M
- Small signal high frequency amplifier field effect (FET) transistor
- BB305C
- Small signal high frequency amplifier field effect (FET) transistor
- BB305M
- Small signal high frequency amplifier field effect (FET) transistor
BB302M Datasheet y Espec
Fabricante : Hitachi
Embalaje : MPAK-4
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 67 KB
Aplicación : Small signal high frequency amplifier field effect (FET) transistor
BB302M PDF Download