Path:OKDatasheet > Datasheet Semiconductor > Hitachi Datasheet > BB601M
BB601M especificación: Small signal high frequency amplifier field effect (FET) transistor
Path:OKDatasheet > Datasheet Semiconductor > Hitachi Datasheet > BB601M
BB601M especificación: Small signal high frequency amplifier field effect (FET) transistor
Fabricante : Hitachi
Embalaje : MPAK-4R
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 73 KB
Aplicación : Small signal high frequency amplifier field effect (FET) transistor