Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-120
L ST230C14C2 ST730C14L3L ST330C08L0 SD1053C22S30L IRFI634G ST280S04M2VL ST230S04M0L ST3230C18R1 309URA160P5 IRFI614G ST230C12C0L SD300N12PBC SD150N14MSC ST1900C52R2L IRLML2803TR SD150OC16L SD600N20MSC IRKH50012 ST2100C40R1L ST180S08P2L SD233N30S50PTC IRLI620G IRG4BC10UD SD600R32M
Parte No | Fabricante | Aplicación |
---|---|---|
IR51H214 | IR | Self-oscillating half-bridge |
ST3230C12R0L | IR | Phase control thyristor |
ST230C14C2 | IR | Phase control thyristor |
ST730C14L3L | IR | Phase control thyristor |
ST330C08L0 | IR | Phase control thyristor |
SD1053C22S30L | IR | Fast recovery diode |
IRFI634G | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 0.45 Ohm, ID = 5.6 A |
ST280S04M2VL | IR | Phase control thyristor |
ST230S04M0L | IR | Phase control thyristor |
ST3230C18R1 | IR | Phase control thyristor |
309URA160P5 | IR | Standard recovery diode |
IRFI614G | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A |
ST230C12C0L | IR | Phase control thyristor |
SD300N12PBC | IR | Standard recovery diode |
SD150N14MSC | IR | Standard recovery diode |
ST1900C52R2L | IR | Phase control thyristor |
IRLML2803TR | IR | N-channel power MOSFET, 30V, 1.2A |
SD150OC16L | IR | Standard recovery diode |
SD600N20MSC | IR | Standard recovery diode |
IRKH50012 | IR | Thyristor/diode and thyristor/thyristor |
ST2100C40R1L | IR | Phase control thyristor |
ST180S08P2L | IR | Phase control thyristor |
SD233N30S50PTC | IR | Fast recovery diode |
IRLI620G | IR | HEXFET power mosfet |
IRG4BC10UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. |
SD600R32MC | IR | Standard recovery diode |
SD103R14S20PC | IR | Fast recovery diode |
IRFZ44ES | IR | Power MOSFET, 60V, 48A |
SD400R24PSC | IR | Standard recovery diode |
SD200R04MC | IR | Standard recovery diode |