IR Catálogo de datos-126
| Parte No | Fabricante | Aplicación |
|---|---|---|
| SD153R12S15MV | IR | Fast recovery diode |
| SD400N16MV | IR | Standard recovery diode |
| JANTX2N6845 | IR | HEXFET power mosfet |
| SD203N16S20MBV | IR | Fast recovery diode |
| SD150N25PBC | IR | Standard recovery diode |
| ST223S04MFN2 | IR | Inverter grade thyristor |
| 182RKI100 | IR | Phase control thyristor |
| IRGBC20UD2 | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
| 47L20 | IR | Standard recovery diode |
| SD253R08S20MBV | IR | Fast recovery diode |
| 307URA160P5 | IR | Standard recovery diode |
| IRF360 | IR | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25A |
| SD203R16S20MSV | IR | Fast recovery diode |
| ST110S14P2L | IR | Phase control thyristor |
| IRGPC40M | IR | Insulated gate bipolar transistor |
| SD500N45PSC | IR | Standard recovery diode |
| 307UR120P4 | IR | Standard recovery diode |
| 302U10A | IR | Standard recovery diode |
| ST1900C52R2 | IR | Phase control thyristor |
| SD253N12S20PSV | IR | Fast recovery diode |
| ST180S12M0VL | IR | Phase control thyristor |
| ST303C04CHK3 | IR | Inverter grade thyristor |
| IRG4BC40S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A |
| ST300C08L0L | IR | Phase control thyristor |
| ST2100C36R3L | IR | Phase control thyristor |
| IRF7467 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12mOhm, ID = 11A |
| 72UFR120YPD | IR | Standard recovery diode |
| IRFP054 | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.014 Ohm, ID = 70A |
| SD253R16S20PV | IR | Fast recovery diode |
| SD233N45S50PTC | IR | Fast recovery diode |