Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-150
02UR100A IRFZ44ZS ST180S20P0L 181RKI40 200HFR80PSV 70UR60 SD600N20PSC ST230S12M1VL 303U200P3 IRG4BC40W SD253R08S15PSV IRKT50008 ST110S16P0L ST303C08LHK0 305UR80P4 ST303C08CHK3L SD103N04S10PBC IRF5305S ST230S08P1L 70UFR120YPD SD203N16S15MV IRF3415S ST303S10PFN3 ST330C16L2 IR51HD31
Parte No | Fabricante | Aplicación |
---|---|---|
IRLI630G | IR | HEXFET power mosfet |
IRG4RC10U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A |
302UR100A | IR | Standard recovery diode |
IRFZ44ZS | IR | N-channel power MOSFET for fast switching applications, 55V, 51A |
ST180S20P0L | IR | Phase control thyristor |
181RKI40 | IR | Phase control thyristor |
200HFR80PSV | IR | Standard recovery diode |
70UR60 | IR | Standard recovery diode |
SD600N20PSC | IR | Standard recovery diode |
ST230S12M1VL | IR | Phase control thyristor |
303U200P3 | IR | Standard recovery diode |
IRG4BC40W | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A |
SD253R08S15PSV | IR | Fast recovery diode |
IRKT50008 | IR | Thyristor/diode and thyristor/thyristor |
ST110S16P0L | IR | Phase control thyristor |
ST303C08LHK0 | IR | Inverter grade thyristor |
305UR80P4 | IR | Standard recovery diode |
ST303C08CHK3L | IR | Inverter grade thyristor |
SD103N04S10PBC | IR | Fast recovery diode |
IRF5305S | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A |
ST230S08P1L | IR | Phase control thyristor |
70UFR120YPD | IR | Standard recovery diode |
SD203N16S15MV | IR | Fast recovery diode |
IRF3415S | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A |
ST303S10PFN3 | IR | Inverter grade thyristor |
ST330C16L2 | IR | Phase control thyristor |
IR51HD310 | IR | Self-oscillating half-bridge |
ST300C18L1 | IR | Phase control thyristor |
SD600R08PTC | IR | Standard recovery diode |
SD453R16S30PTC | IR | Fast recovery diode |