Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-161

5 301URA250P3 SD300N08MSC SD103R04S20PC SD200N04PSC IRFI520N SD453N25S30MC SD600OC16R 130HF40PV IRHM8064 IR2131 SD103R04S10PC IRGP430U IRU1206-18CD SD203R20S10PBC 309U80P5 ST203C12CHH3 SD103R12S15MSC SD150R25PBC ST230S14M1 IRFIBF30G SD153N14S10MBV SD253N10S20MSV ST300C04L0 IRF953

IR Catálogo de datos-161

Parte NoFabricanteAplicación
IRFP360LC IRHEXFET power mosfet
307URA200P5 IRStandard recovery diode
301URA250P3 IRStandard recovery diode
SD300N08MSC IRStandard recovery diode
SD103R04S20PC IRFast recovery diode
SD200N04PSC IRStandard recovery diode
IRFI520N IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 7.6 A
SD453N25S30MC IRFast recovery diode
SD600OC16R IRStandard recovery diode
130HF40PV IRStandard recovery diode
IRHM8064 IRHEXFET transistor
IR2131 IR3 high side and 3 low side driver
SD103R04S10PC IRFast recovery diode
IRGP430U IRInsulated gate bipolar transistor
IRU1206-18CD IR1A very low dropout positive fixed 1.8V regulator
SD203R20S10PBC IRFast recovery diode
309U80P5 IRStandard recovery diode
ST203C12CHH3 IRInverter grade thyristor
SD103R12S15MSC IRFast recovery diode
SD150R25PBC IRStandard recovery diode
ST230S14M1 IRPhase control thyristor
IRFIBF30G IRHEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A
SD153N14S10MBV IRFast recovery diode
SD253N10S20MSV IRFast recovery diode
ST300C04L0 IRPhase control thyristor
IRF9530NS IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A
IRG4PSC71U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A
305UA200P3 IRStandard recovery diode
ST303S10PFN0L IRInverter grade thyristor
IRFP260N IRHEXFET power MOSFET. VDSS = 200 V, RDS(on) = 0.04 Ohm, ID = 50 A

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