| Parte No | Fabricante | Aplicación |
|---|
| SD203N12S10MBC | IR | Fast recovery diode |
| ST173S12PFK2 | IR | Inverter grade thyristor |
| ST330C04C1L | IR | Phase control thyristor |
| SD153R04S10MSV | IR | Fast recovery diode |
| IRFZ48R | IR | Power MOSFET, 60V, 50A |
| SD203N10S15PBC | IR | Fast recovery diode |
| ST1200C20K1 | IR | Phase control thyristor |
| IRF3710 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 23 mOhm, ID = 57A |
| SD203R20S15PC | IR | Fast recovery diode |
| IRFU9120N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A |
| IRF9410 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm. |
| ST1200C20K2 | IR | Phase control thyristor |
| IRF7504 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.27 Ohm |
| IRF130 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A |
| IRG4PH40UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A |
| IRG4BC40U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A |
| SD600R20MC | IR | Standard recovery diode |
| SD200N16PV | IR | Standard recovery diode |
| 302UFR120PD | IR | Standard recovery diode |
| ST303C12CHK0L | IR | Inverter grade thyristor |
| ST330S14M3 | IR | Phase control thyristor |
| ST103S08PFN1 | IR | Phase control thyristor |
| IRF530NS | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A |
| IRF9240 | IR | HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A |
| SD300N12MBC | IR | Standard recovery diode |
| 307URA200P4 | IR | Standard recovery diode |
| SD300R25MBC | IR | Standard recovery diode |
| SD150R14PBC | IR | Standard recovery diode |
| 309U250P2 | IR | Standard recovery diode |
| IRG4BC30KD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A |
