Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-89
S10PBC SD203R08S15PSC ST203S10MFJ1L CPV364MF CPV363MU 309UR80 ST103S08PFN2 SD153N08S15PSV ST333S04PFM0 ST330S14P3 SD203R25S10MSC SD103R14S15PSC ST223S08MFN0L IR2127 IRFI840G IRG4PH20KD IRF5810 SD403C12S15C 305UR120P4 309UA120P5 IRFR5505 IRF9540N 309UA120 IRGBC30M-S 200HFR80PV ST7
Parte No | Fabricante | Aplicación |
---|---|---|
ST180S04M1L | IR | Phase control thyristor |
SD203N25S10PBC | IR | Fast recovery diode |
SD203R08S15PSC | IR | Fast recovery diode |
ST203S10MFJ1L | IR | Inverter grade thyristor |
CPV364MF | IR | IGBT SIP module |
CPV363MU | IR | IGBT SIP module |
309UR80 | IR | Standard recovery diode |
ST103S08PFN2 | IR | Phase control thyristor |
SD153N08S15PSV | IR | Fast recovery diode |
ST333S04PFM0 | IR | Inverter grade thyristor |
ST330S14P3 | IR | Phase control thyristor |
SD203R25S10MSC | IR | Fast recovery diode |
SD103R14S15PSC | IR | Fast recovery diode |
ST223S08MFN0L | IR | Inverter grade thyristor |
IR2127 | IR | Current limiting single channel driver |
IRFI840G | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.85 Ohm, ID = 4.6 A |
IRG4PH20KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A |
IRF5810 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V |
SD403C12S15C | IR | Fast recovery diode |
305UR120P4 | IR | Standard recovery diode |
309UA120P5 | IR | Standard recovery diode |
IRFR5505 | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A |
IRF9540N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A |
309UA120 | IR | Standard recovery diode |
IRGBC30M-S | IR | Insulated gate bipolar transistor |
200HFR80PV | IR | Standard recovery diode |
ST700C22L0L | IR | Phase control thyristor |
SD203N08S10PSC | IR | Fast recovery diode |
SD150N20MSC | IR | Standard recovery diode |
303UR120P5 | IR | Standard recovery diode |