Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRC644
IRC644 especificación: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 similares
- IRC630
- "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
- IRC630
- HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm
- IRC640
- "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
- IRC644
- HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 Datasheet y Espec
Fabricante : IR
Embalaje : TO-220
Pins : 5
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 247 KB
Aplicación : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 PDF Download