IRF3709S especificación: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 9.0 mOhm, ID = 90A

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IRF3709S Datasheet y Espec

Fabricante : IR

Embalaje : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 133 KB

Aplicación : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 9.0 mOhm, ID = 90A