IRF3808S especificación: HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A

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IRF3808S Datasheet y Espec

Fabricante : IR

Embalaje : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 177 KB

Aplicación : HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A