Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRF430
IRF430 especificación: Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A
Path:OKDatasheet > Datasheet Semiconductor > IR Datasheet > IRF430
IRF430 especificación: Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A
Fabricante : IR
Embalaje : TO-3
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 160 KB
Aplicación : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A