IRF7473 especificación: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9A

IRF7473 similares

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7473 Datasheet y Espec

Fabricante : IR

Embalaje : SO

Pins : 8

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 215 KB

Aplicación : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9A