IRF7478 especificación: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.

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IRF7478 Datasheet y Espec

Fabricante : IR

Embalaje : SO

Pins : 8

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 229 KB

Aplicación : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.