IRF9530N similares

  • IRF9130
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9530N Datasheet y Espec

Fabricante : IR 

Embalaje :  

Pins : 3 

Temperatura : Min -55 °C | Max 175 °C

Tamaño : 124 KB

Aplicación : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A 

IRF9530N PDF Download